The third-generation semiconductor materials of gallium nitride (GaN) and silicon carbide (SiC), belong to the group of wide band gap (WBG) semiconductors, are increasingly being touted as an alternative to silicon (Si) for 5G and EV applications.
We gather prestigious speakers and industry leaders together to share their insights and innovative technologies. This virtual meeting will address key topics in the field of GaN and SiC mainly focusing on EV applications, which will inspire the leaders in the industry and encourage all the participants to a promising future.
Vice President of Hon Hai Technology Head of Semiconductor Business Group
Vice President and General Director Electronic and
Optoelectronic System Research Laboratories,ITRI
Industrial Technology Research Institute &
Institute for Information Industry Chairman
IQE President
Technical Program Director, Applied Materials
Managing Director of STMicroelectronics Taiwan,
Vice President of APAC Region STMicroelectronics
Nobel Prize in Physics(2014)
Nagoya University Professor,Japan
Taiwan Semiconductor Manufacturing Company Ltd. Senior Director
Industrial Development Bureau, Ministry of Economic Affairs Director General
National Central University Vice President
Department of Electronic & Computer Engineering, HKUST
Chair Professor
Department of Engineering Science and Ocean Engineer, NTU Professor
Electrical Engineering Department,
UCLA Professor
Advanced Wireless Semiconductor Company President,Chief Technology Officer
General Manager (Asia) GaN Systems Inc.
DIGITIMES Research Analyst & Deputy Director
Win Semiconductor Corp. Vice Chairman
National Yang Ming Chiao Tung University Senior Vice President
Hon Hai Research Institute President
鴻海研究院半導體研究所所長
